Exploring the New Era of Post-MOSFET Devices for High-Speed and Computational Performance

DOI

10.2991/978-94-6239-628-9_24How to use a DOI?

Keywords

Nanoscale devices; MOSFET; CMOS; Graphene FETs; Nanowire

Abstract

Conventional Metal-Oxide-Semiconductor FET (MOSFET) technology has been the industry standard in the electronics domain over the last four decades. In this time, MOSFET design has been rigorously optimized with gate length (L_G) scaled down from over 10 µm in 1970s to 20 nm in the year 2014 (later, industry giant TSMC started 16 nm FinFET technology from the year 2015 and now it has reached 5 nm FinFET technology and is planning for 3 nm in near future). MOSFET miniaturization enables higher packing density, integration capabilities, improved performance due to reduced parasitic capacitances and resistances, enhanced switching speeds and lower power consumption, enabling the realization of advanced integrated circuits with increased functionality and improved overall system performance. As the size of MOSFETs approach that of a few silicon atoms, we experience fundamental physical and technological constraints, such as quantum tunnelling, leakage currents, and process variations, which hinder further size reduction as per Moore’s law. To exploit mature silicon-based fabrication technology, an effort must be made to integrate emerging CMOS technologies with existing fabrication techniques. In our work, we review nanowire FETs, carbon nanotube FETs, graphene FETs, Heterojunction FET (HEMT) and other emerging technology with high speed, performance and computational properties.

Copyright

© 2026 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Mukesh Kumar
AU  - Kalyan Koley
AU  - Aminul Islam
PY  - 2026
DA  - 2026/03/31
TI  - Exploring the New Era of Post-MOSFET Devices for High-Speed and Computational Performance
BT  - Proceedings of the International Conference on Recent Trends in Intelligent Computing, Manufacturing, and Electronics (rTIME 2025)
PB  - Atlantis Press
SP  - 264
EP  - 273
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6239-628-9_24
DO  - 10.2991/978-94-6239-628-9_24
ID  - Kumar2026
ER  -