A New Preparation Process of Double-gate FETs Based on Monolayer Graphene Nanoflakes
- 10.2991/ame-17.2017.65How to use a DOI?
- Monolayer graphene nanoflakes, Double-gate field effect transistor (DG-FET), Characterization of DG-FET
A new preparation process to product double-gate field effect transistor (DG-FET) of monolayer graphene nanoflakes, fabricated by mechanical exfoliation, was systematically studied in this paper. The graphene DG-FETs are bipolar and possess high gate modulation (On/Off ratio is large), and higher regulation accuracy, which is double-gate regulation. These results showed the extraordinary performance of the double-gate FETs based on monolayer graphene, which might open a new road to develop graphene-based material in the application of double-gate FETs.
- © 2017, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Zong-Qi Bai AU - Ka-Di Zhu AU - Hang Yang AU - Xue-Ao Zhang PY - 2017/04 DA - 2017/04 TI - A New Preparation Process of Double-gate FETs Based on Monolayer Graphene Nanoflakes BT - Proceedings of the 3rd Annual International Conference on Advanced Material Engineering (AME 2017) PB - Atlantis Press SP - 397 EP - 401 SN - 2352-5401 UR - https://doi.org/10.2991/ame-17.2017.65 DO - 10.2991/ame-17.2017.65 ID - Bai2017/04 ER -