Proceedings of the Advances in Materials, Machinery, Electrical Engineering (AMMEE 2017)

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Study of Molybdenum Trioxide as a P-Type Dopant in Organic Semiconductors: The Influence of Density of Gap States on Their N-/P- Type Characteristics

Authors
Jingqiu Zhang, Shainan Zhu, Lintai Shang, Jinpeng Yang
Corresponding Author
Jingqiu Zhang
Available Online June 2017.
DOI
10.2991/ammee-17.2017.119How to use a DOI?
Keywords
organic semiconductors, molecular doping, density of gap states, conductivity, MoO3.
Abstract

we studied the mechanism of original n- and p-type "intrinsic" organic films 8-Hydroxyquinoline aluminum (Alq3) and N, N'-bis-1-naphthyl-N, N'-diphenyl-1, 1'-biphenyl-4, 4'-diamine (NPB) via using molybdenum trioxide (MoO3) as a p-type dopant. It is found that the conductivities extracted from "holes-only" devices both for Alq3 and NPB films are improved as a function of doping molar ratio (MR) of MoO3. However, the differences of change of conductivities in NPB films and Alq3 films after doping can be found, where (1) a rapid increase of conductivity in Alq3 with slope S>1 is shown in the entire MR range; (2) in NPB films, the conductivity changes with a slope of S>1 can be found in the low doping region (MR<~0.04) and a slope of ~1 can be found with MR>~0.04. According to these observation, we proposed that different distributions of occupied and unoccupied DOGS in energy gap of organic films is the origin of "intrinsic" n-/p- type organic films, and therefore can be passivated differently via MoO3. These findings suggest the effective way for improving free carriers concentrations by reducing DOGS in organic films.

Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the Advances in Materials, Machinery, Electrical Engineering (AMMEE 2017)
Series
Advances in Engineering Research
Publication Date
June 2017
ISBN
10.2991/ammee-17.2017.119
ISSN
2352-5401
DOI
10.2991/ammee-17.2017.119How to use a DOI?
Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

risenwbib
TY  - CONF
AU  - Jingqiu Zhang
AU  - Shainan Zhu
AU  - Lintai Shang
AU  - Jinpeng Yang
PY  - 2017/06
DA  - 2017/06
TI  - Study of Molybdenum Trioxide as a P-Type Dopant in Organic Semiconductors: The Influence of Density of Gap States on Their N-/P- Type Characteristics
BT  - Proceedings of the Advances in Materials, Machinery, Electrical Engineering (AMMEE 2017)
PB  - Atlantis Press
SP  - 609
EP  - 615
SN  - 2352-5401
UR  - https://doi.org/10.2991/ammee-17.2017.119
DO  - 10.2991/ammee-17.2017.119
ID  - Zhang2017/06
ER  -