Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors
I. Abuetwirat, K. Liedermann
Available Online June 2015.
- https://doi.org/10.2991/cisia-15.2015.238How to use a DOI?
- thin oxide film; dielectric properties; Havriliak–Negami (HN) equation; electrical conductivity
- In this paper MIS (Metal-Insulator-Semiconductor) Ta2O5 capacitor has been studied in terms of dielectric relaxation with a low frequency dielectric spectroscopy. The results acquired for Ta2O5 show a relaxation peak in the temperature and frequency range available, 187 K – 385 K, 1 Hz – 10 MHz. The loss peak frequency follows the Arrhenius law dependence with the activation energy of 0.048 eV. In conductivity spectra, Ta2O5 film exhibits a steady–state value at low frequencies and a monotonous increase at high frequencies depending on temperature. The observed conductivity followed a slightly superlinear power law.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - I. Abuetwirat AU - K. Liedermann PY - 2015/06 DA - 2015/06 TI - Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors PB - Atlantis Press SP - 889 EP - 891 SN - 2352-538X UR - https://doi.org/10.2991/cisia-15.2015.238 DO - https://doi.org/10.2991/cisia-15.2015.238 ID - Abuetwirat2015/06 ER -