Proceedings of the International Conference on Computer Information Systems and Industrial Applications

Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors

Authors
I. Abuetwirat, K. Liedermann
Corresponding Author
I. Abuetwirat
Available Online June 2015.
DOI
https://doi.org/10.2991/cisia-15.2015.238How to use a DOI?
Keywords
thin oxide film; dielectric properties; Havriliak–Negami (HN) equation; electrical conductivity
Abstract
In this paper MIS (Metal-Insulator-Semiconductor) Ta2O5 capacitor has been studied in terms of dielectric relaxation with a low frequency dielectric spectroscopy. The results acquired for Ta2O5 show a relaxation peak in the temperature and frequency range available, 187 K – 385 K, 1 Hz – 10 MHz. The loss peak frequency follows the Arrhenius law dependence with the activation energy of 0.048 eV. In conductivity spectra, Ta2O5 film exhibits a steady–state value at low frequencies and a monotonous increase at high frequencies depending on temperature. The observed conductivity followed a slightly superlinear power law.
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Proceedings
Part of series
Advances in Computer Science Research
Publication Date
June 2015
ISBN
978-94-62520-72-1
ISSN
2352-538X
DOI
https://doi.org/10.2991/cisia-15.2015.238How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - I. Abuetwirat
AU  - K. Liedermann
PY  - 2015/06
DA  - 2015/06
TI  - Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors
PB  - Atlantis Press
SP  - 889
EP  - 891
SN  - 2352-538X
UR  - https://doi.org/10.2991/cisia-15.2015.238
DO  - https://doi.org/10.2991/cisia-15.2015.238
ID  - Abuetwirat2015/06
ER  -