Impact of Process Variations and Defects on RF Front-end in Nanoscale CMOS

DOI

10.2991/eeic-13.2013.10How to use a DOI?

Keywords

nano-scale integrated circuits; CMOS process variations and defects; device characteristics; RF front-end

Abstract

The scaling of MOSFET causes various process variations and defects which result in increasing performance loss of nanoscale integrated circuits. Major sources of process variations and defects in nanometer CMOS technology are studied. Then, their impact on MOSFET characteristics and on VCO circuit performances is analyzed. Finally, the paper proposes a novel self-healing circuit structure for VCO, which is able to work robustly against process variations.

Copyright

© 2013, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yuntao Liu
AU  - Aoyang Zhang
AU  - Xiangchong Liu
PY  - 2013/12
DA  - 2013/12
TI  - Impact of Process Variations and Defects on RF Front-end in Nanoscale CMOS
BT  - Proceedings of the 3rd International Conference on Electric and Electronics
PB  - Atlantis Press
SP  - 41
EP  - 45
SN  - 1951-6851
UR  - https://doi.org/10.2991/eeic-13.2013.10
DO  - 10.2991/eeic-13.2013.10
ID  - Liu2013/12
ER  -