Proceedings of the 3rd International Conference on Electric and Electronics

Simulation Study on Internal Transparent Collector IGBT Using Superjunction Drift

Authors
Dongqing Hu, Peihao Lv, Yunpeng Jia
Corresponding Author
Dongqing Hu
Available Online December 2013.
DOI
10.2991/eeic-13.2013.78How to use a DOI?
Keywords
superjunction; local carrier lifetime; internal transparent collector; IGBT
Abstract

The super junction (SJ) drift is used in internal transparent collector IGBT. The influences of position of local carrier lifetime region, local carrier lifetime, and buffer layer doping level on the devices’ trade-off characteristics have been simulation studied. The results show that for given local carrier liftetime, the turn-off losses may have a valley value Eoffmin. The higher local carrier lifetime is, the higher Eoffmin will be. Several factors are at work. Competition effects for excess carrier extraction through reverse biased super junction and forward biased collector may be one reason. Infinite excess carrier recombination velocity in local carrier lifetime control region leads to the back-emitter injection efficiency e be no less than certain value. In addition; increasing buffer layer doping level appropriately could win better trade-off and wider trade-off range.

Copyright
© 2013, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 3rd International Conference on Electric and Electronics
Series
Advances in Intelligent Systems Research
Publication Date
December 2013
ISBN
10.2991/eeic-13.2013.78
ISSN
1951-6851
DOI
10.2991/eeic-13.2013.78How to use a DOI?
Copyright
© 2013, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Dongqing Hu
AU  - Peihao Lv
AU  - Yunpeng Jia
PY  - 2013/12
DA  - 2013/12
TI  - Simulation Study on Internal Transparent Collector IGBT Using Superjunction Drift
BT  - Proceedings of the 3rd International Conference on Electric and Electronics
PB  - Atlantis Press
SP  - 333
EP  - 336
SN  - 1951-6851
UR  - https://doi.org/10.2991/eeic-13.2013.78
DO  - 10.2991/eeic-13.2013.78
ID  - Hu2013/12
ER  -