Design of a Voltage Reference based on Subthreshold MOSFETS

DOI

10.2991/eia-17.2017.23How to use a DOI?

Keywords

voltage reference; subthreshold region; low power; low voltage; temperature coefficient

Abstract

This article proposed that an ultra-low power voltage reference under low supply voltage took advantage of characteristics of MOSFETS operating in the subthreshold region to meet the low power design. The circuit was designed using 0.18 CMOS process of SMIC, and simulated after layout using SPECTRE simulation tool. The results showed that good linearity can be attained in a supply voltage range of 0.9-3.0V and the output reference voltage is 600.8ñ0.65mV. In condition of 1.8V power supply, typical temperature coefficient is 15ppm/ between 25 and 115. Meanwhile under the same condition, the power consumption is only 0.54 at room temperature. This work can be applied to smart sensor and wearable medical equipment etc, which need low voltage and low power dissipation.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Dan SHI
AU  - Bo GAO
AU  - Min GONG
PY  - 2017/07
DA  - 2017/07
TI  - Design of a Voltage Reference based on Subthreshold MOSFETS
BT  - Proceedings of the 2017 International Conference on Electronic Industry and Automation (EIA 2017)
PB  - Atlantis Press
SP  - 105
EP  - 109
SN  - 1951-6851
UR  - https://doi.org/10.2991/eia-17.2017.23
DO  - 10.2991/eia-17.2017.23
ID  - SHI2017/07
ER  -