Device Performance of Multilayer MoSe2 Field Effect Transistors

DOI

10.2991/emcpe-16.2016.126How to use a DOI?

Keywords

Field Effect Transistor(FET); Multilayer MoSe2; Optoelectronic Properties

Abstract

In this study, we report on the electrical and optoelectronic properties of field effect transistors based on multilayer MoSe2. The multilayer MoSe2 device showed a room-temperature mobility of 27.3 cm2 V 1 s 1 and possessed a high gate modulation larger than 105. We obtained an ultrahigh photoresponsivity of 59.8 AW 1 under 405 nm laser beam excitation. These results showed that devices based on multilayer MoSe2 are promising for applications in electronics and optoelectronics.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Qi Li
AU  - Xueao Zhang
AU  - Hang Yang
PY  - 2016/08
DA  - 2016/08
TI  - Device Performance of Multilayer MoSe2 Field Effect Transistors
BT  - Proceedings of the 2016 5th International Conference on Environment, Materials, Chemistry and Power Electronics
PB  - Atlantis Press
SP  - 442
EP  - 446
SN  - 2352-5401
UR  - https://doi.org/10.2991/emcpe-16.2016.126
DO  - 10.2991/emcpe-16.2016.126
ID  - Li2016/08
ER  -