Optimization of poly-silicon deposition process for switch

DOI

10.2991/emeit.2012.200How to use a DOI?

Keywords

poly-silicon, anneal, cantilever beam, switch.

Abstract

Aiming at the severe effect of poly-silicon deposition process on the performance of polysilicon swtich, experiments were made on optimization of poly-silicon deposition and releasing the stress of polysilicon beams to obtain optimal process conditions. By using the optimizing process, the fabrication process for polysilicon mechanical switch is designed, and a poly-silicon micromachined RF MEMS(radio frequency microelectronic machined system) switch has been fabricated. The switch is tested, the results are as follows: the off-state capacitance and on-state capacitance are 0.1 p F and 2.5p F , respectively, and the pull down voltage is 45V. Those optimizing key process technology for fabrication polysilicon mechanical switches is useful, and will be a base for developing RF switch systems with IC.

Copyright

© 2012, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Zhengyuan Zhang
AU  - Yang Cao
AU  - Yong Mei
AU  - Zhicheng Feng
AU  - Jiangen Li
PY  - 2012/09
DA  - 2012/09
TI  - Optimization of poly-silicon deposition process for switch
BT  - Proceedings of the 2nd International Conference on Electronic & Mechanical Engineering and Information Technology (EMEIT 2012)
PB  - Atlantis Press
SP  - 927
EP  - 930
SN  - 1951-6851
UR  - https://doi.org/10.2991/emeit.2012.200
DO  - 10.2991/emeit.2012.200
ID  - Zhang2012/09
ER  -