Effects of different gases on electrical properties and reliability of Ge MOS capacitors with GeOx/GeOxNy as gate dielectric
- 10.2991/icaees-15.2015.64How to use a DOI?
- Germanium oxide; MOS; Reliability
In this paper, germanium oxides/oxynitrides were prepared in different gases. The effects of different gas ambients on the electrical properties and reliability of Ge MOS capacitors were analyzed. The experiment results showed that the nitride incorporation could improve the performances of Ge MOS capacitors with reduced interface-states and gate leakage current.
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - C.X. Li AU - Y.Z. Zhang AU - J.H. Zhu PY - 2015/07 DA - 2015/07 TI - Effects of different gases on electrical properties and reliability of Ge MOS capacitors with GeOx/GeOxNy as gate dielectric BT - Proceedings of the 3rd International Conference on Advances in Energy and Environmental Science 2015 PB - Atlantis Press SP - 346 EP - 349 SN - 2352-5401 UR - https://doi.org/10.2991/icaees-15.2015.64 DO - 10.2991/icaees-15.2015.64 ID - Li2015/07 ER -