Effects of different gases on electrical properties and reliability of Ge MOS capacitors with GeOx/GeOxNy as gate dielectric

DOI

10.2991/icaees-15.2015.64How to use a DOI?

Keywords

Germanium oxide; MOS; Reliability

Abstract

In this paper, germanium oxides/oxynitrides were prepared in different gases. The effects of different gas ambients on the electrical properties and reliability of Ge MOS capacitors were analyzed. The experiment results showed that the nitride incorporation could improve the performances of Ge MOS capacitors with reduced interface-states and gate leakage current.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - C.X. Li
AU  - Y.Z. Zhang
AU  - J.H. Zhu
PY  - 2015/07
DA  - 2015/07
TI  - Effects of different gases on electrical properties and reliability of Ge MOS capacitors with GeOx/GeOxNy as gate dielectric
BT  - Proceedings of the 3rd International Conference on Advances in Energy and Environmental Science 2015
PB  - Atlantis Press
SP  - 346
EP  - 349
SN  - 2352-5401
UR  - https://doi.org/10.2991/icaees-15.2015.64
DO  - 10.2991/icaees-15.2015.64
ID  - Li2015/07
ER  -