Proceedings of the 2nd International Conference on Computer Science and Electronics Engineering

Design of a High Performance 5.2 GHz Low Phase Noise Voltage Controlled Oscillator Using 90nm CMOS Technology

Authors
Mohammed A. Aqeeli, Zhirun Hu
Corresponding Author
Mohammed A. Aqeeli
Available Online March 2013.
DOI
https://doi.org/10.2991/iccsee.2013.181How to use a DOI?
Keywords
design method, figure of merit, low phase noise, CMOS technology.
Abstract
In this paper, a novel Figure of Merit (FOM), low phase noise, LC-tank voltage-controlled oscillator (VCO) is presented. The work presents a fully integrated 5.2 GHz VCO designed in a 90nm CMOS process. The proposed VCO features a worst-case phase noise of -130.10dBc/Hz and -133.00 dBc/Hz at 600 kHz and 1 MHz frequency offset from 5.2GHz carrier is achieved. An optimization technique is used to design the excellent FOM. The FOM is -206.02dBc/Hz. It features a supply voltage of 2.7 V, with a core of only 0.5 mA.
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Proceedings
Proceedings of the 2nd International Conference on Computer Science and Electronics Engineering
Part of series
Advances in Intelligent Systems Research
Publication Date
March 2013
ISBN
978-90-78677-61-1
DOI
https://doi.org/10.2991/iccsee.2013.181How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Mohammed A. Aqeeli
AU  - Zhirun Hu
PY  - 2013/03
DA  - 2013/03
TI  - Design of a High Performance 5.2 GHz Low Phase Noise Voltage Controlled Oscillator Using 90nm CMOS Technology
BT  - Proceedings of the 2nd International Conference on Computer Science and Electronics Engineering
PB  - Atlantis Press
UR  - https://doi.org/10.2991/iccsee.2013.181
DO  - https://doi.org/10.2991/iccsee.2013.181
ID  - Aqeeli2013/03
ER  -