Research on Hot-side Radiation Intensity of Semiconductor Refrigeration

DOI

10.2991/iccte-16.2016.97How to use a DOI?

Keywords

Semiconductor refrigeration; Refrigeration performance; Hot-side radiation intensity; Water cooling radiation

Abstract

The hot-side radiation intensity is an important factor of the semiconductor refrigeration performance. This article first selected three radiation ways: the air cooling radiation, the heat pipe radiation as well as the water cooling radiation, and then conducted the experimental study to the three radiation ways, obtaining conclusion that the effect of refrigeration was the best under the water cooling radiation. Then under the best radiation, the water-cooled radiation, it conducted experimental study of the radiation intensity, changing the radiation intensity by changing the hot-side water flow, and selected six groups of radiation intensities to carry on the experiment, and discovered the influence rule of hot-side radiation intensity to the performance of semiconductor refrigeration.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yunfeng Pang
AU  - Yuhong An
AU  - Minghu Xu
PY  - 2016/01
DA  - 2016/01
TI  - Research on Hot-side Radiation Intensity of Semiconductor Refrigeration
BT  - Proceedings of the 2016 International Conference on Civil, Transportation and Environment
PB  - Atlantis Press
SP  - 585
EP  - 590
SN  - 2352-5401
UR  - https://doi.org/10.2991/iccte-16.2016.97
DO  - 10.2991/iccte-16.2016.97
ID  - Pang2016/01
ER  -