Proceedings of the 2016 International Conference on Engineering and Advanced Technology

Channel Length, Drift-region Distance, and Unit-Finger Width Impacts on the HBM Robustness for the 600 V N-Channel LDMOS Transistors

Authors
ShenLi CHEN, ChihYing YEN, YiHao CHAO, KueiJyun CHEN, ChihHung YANG, YiCih WU, YiHao CHIU
Corresponding Author
ShenLi CHEN
Available Online May 2016.
DOI
https://doi.org/10.2991/iceat-16.2017.41How to use a DOI?
Keywords
Human-body-model (HBM), Lateral-diffused metal-oxide-semiconductor (LDMOS), Ultra-High-Voltage (UHV)
Abstract

An UHV n-channel LDMOS transistor is usually used for the power management AC-DC convertor that need to enhance the ESD robustness to resist external transient noises. In the cost saving consideration, an UHV nLDMOS unit should be both acted as a circuit element and anti-ESD device because of its large layout area. In this work, modulations of channel length, drift-region distance, and unit-finger width of a single-finger and double-fingers 600 V UHV nLDMOS devices are focused to find out the apposite layout parameters trend. First, as for the single-finger device-under-test (DUT) samples, channel-length modulations devices were at least passed HBM 3.5 kV level under the reverse voltage polarity, and its HBM robustness passed 8 kV under the reverse voltage polarity. Next, the drift-region modulated devices can be at least passed HBM 6.75 kV level under the PS mode. In the NS mode zapping, its HBM robustness will be over 8 kV. On the other hand, as for the double-finger DUTs, experimental data were shown that the HBM ESD robustness is enhanced with increased width of DCG and channel width at least passed HBM 2.75 kV under the PS mode. All experimental devices can pass 8 kV anti-HBM ESD robustness for reverse voltage polarity.

Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2016 International Conference on Engineering and Advanced Technology
Series
Advances in Engineering Research
Publication Date
May 2016
ISBN
978-94-6252-294-7
ISSN
2352-5401
DOI
https://doi.org/10.2991/iceat-16.2017.41How to use a DOI?
Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - ShenLi CHEN
AU  - ChihYing YEN
AU  - YiHao CHAO
AU  - KueiJyun CHEN
AU  - ChihHung YANG
AU  - YiCih WU
AU  - YiHao CHIU
PY  - 2016/05
DA  - 2016/05
TI  - Channel Length, Drift-region Distance, and Unit-Finger Width Impacts on the HBM Robustness for the 600 V N-Channel LDMOS Transistors
BT  - Proceedings of the 2016 International Conference on Engineering and Advanced Technology
PB  - Atlantis Press
SP  - 198
EP  - 203
SN  - 2352-5401
UR  - https://doi.org/10.2991/iceat-16.2017.41
DO  - https://doi.org/10.2991/iceat-16.2017.41
ID  - CHEN2016/05
ER  -