Channel Length, Drift-region Distance, and Unit-Finger Width Impacts on the HBM Robustness for the 600 V N-Channel LDMOS Transistors
- https://doi.org/10.2991/iceat-16.2017.41How to use a DOI?
- Human-body-model (HBM), Lateral-diffused metal-oxide-semiconductor (LDMOS), Ultra-High-Voltage (UHV)
An UHV n-channel LDMOS transistor is usually used for the power management AC-DC convertor that need to enhance the ESD robustness to resist external transient noises. In the cost saving consideration, an UHV nLDMOS unit should be both acted as a circuit element and anti-ESD device because of its large layout area. In this work, modulations of channel length, drift-region distance, and unit-finger width of a single-finger and double-fingers 600 V UHV nLDMOS devices are focused to find out the apposite layout parameters trend. First, as for the single-finger device-under-test (DUT) samples, channel-length modulations devices were at least passed HBM 3.5 kV level under the reverse voltage polarity, and its HBM robustness passed 8 kV under the reverse voltage polarity. Next, the drift-region modulated devices can be at least passed HBM 6.75 kV level under the PS mode. In the NS mode zapping, its HBM robustness will be over 8 kV. On the other hand, as for the double-finger DUTs, experimental data were shown that the HBM ESD robustness is enhanced with increased width of DCG and channel width at least passed HBM 2.75 kV under the PS mode. All experimental devices can pass 8 kV anti-HBM ESD robustness for reverse voltage polarity.
- © 2017, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - ShenLi CHEN AU - ChihYing YEN AU - YiHao CHAO AU - KueiJyun CHEN AU - ChihHung YANG AU - YiCih WU AU - YiHao CHIU PY - 2016/05 DA - 2016/05 TI - Channel Length, Drift-region Distance, and Unit-Finger Width Impacts on the HBM Robustness for the 600 V N-Channel LDMOS Transistors BT - Proceedings of the 2016 International Conference on Engineering and Advanced Technology PB - Atlantis Press SP - 198 EP - 203 SN - 2352-5401 UR - https://doi.org/10.2991/iceat-16.2017.41 DO - https://doi.org/10.2991/iceat-16.2017.41 ID - CHEN2016/05 ER -