Analysis and Behavioral Modeling of TiO2-based Resistance Switching Device

DOI

10.2991/iceesd-17.2017.21How to use a DOI?

Keywords

Resistive random access memory (RRAM), Au/TiO2/Au, Behavioral modeling.

Abstract

This paper presents a new behavioral model for TiO2 resistive random access memory (RRAM). The model is based on hierarchical transformation filament theory, the device parameters are obtained from an Au/TiO2/Au MIM (Metal/Insulator/Metal) RRAM cell with 100 nm in diameter, 50 nm-thick TiO2 thin film. The proposed model can be applied to efficient simulation of large-scale RRAM array.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Gang Liu
AU  - Liang Fang
PY  - 2017/04
DA  - 2017/04
TI  - Analysis and Behavioral Modeling of TiO2-based Resistance Switching Device
BT  - Proceedings of the 2017 6th International Conference on Energy, Environment and Sustainable Development (ICEESD 2017)
PB  - Atlantis Press
SP  - 113
EP  - 116
SN  - 2352-5401
UR  - https://doi.org/10.2991/iceesd-17.2017.21
DO  - 10.2991/iceesd-17.2017.21
ID  - Liu2017/04
ER  -