Proceedings of the 2017 6th International Conference on Energy, Environment and Sustainable Development (ICEESD 2017)

Analysis and Behavioral Modeling of TiO2-based Resistance Switching Device

Authors
Gang Liu, Liang Fang
Corresponding Author
Gang Liu
Available Online April 2017.
DOI
https://doi.org/10.2991/iceesd-17.2017.21How to use a DOI?
Keywords
Resistive random access memory (RRAM), Au/TiO2/Au, Behavioral modeling.
Abstract
This paper presents a new behavioral model for TiO2 resistive random access memory (RRAM). The model is based on hierarchical transformation filament theory, the device parameters are obtained from an Au/TiO2/Au MIM (Metal/Insulator/Metal) RRAM cell with 100 nm in diameter, 50 nm-thick TiO2 thin film. The proposed model can be applied to efficient simulation of large-scale RRAM array.
Open Access
This is an open access article distributed under the CC BY-NC license.

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Proceedings
2017 6th International Conference on Energy, Environment and Sustainable Development (ICEESD 2017)
Part of series
Advances in Engineering Research
Publication Date
April 2017
ISBN
978-94-6252-328-9
ISSN
2352-5401
DOI
https://doi.org/10.2991/iceesd-17.2017.21How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Gang Liu
AU  - Liang Fang
PY  - 2017/04
DA  - 2017/04
TI  - Analysis and Behavioral Modeling of TiO2-based Resistance Switching Device
BT  - 2017 6th International Conference on Energy, Environment and Sustainable Development (ICEESD 2017)
PB  - Atlantis Press
SN  - 2352-5401
UR  - https://doi.org/10.2991/iceesd-17.2017.21
DO  - https://doi.org/10.2991/iceesd-17.2017.21
ID  - Liu2017/04
ER  -