Analysis and Behavioral Modeling of TiO2-based Resistance Switching Device
Gang Liu, Liang Fang
Available Online April 2017.
- https://doi.org/10.2991/iceesd-17.2017.21How to use a DOI?
- Resistive random access memory (RRAM), Au/TiO2/Au, Behavioral modeling.
- This paper presents a new behavioral model for TiO2 resistive random access memory (RRAM). The model is based on hierarchical transformation filament theory, the device parameters are obtained from an Au/TiO2/Au MIM (Metal/Insulator/Metal) RRAM cell with 100 nm in diameter, 50 nm-thick TiO2 thin film. The proposed model can be applied to efficient simulation of large-scale RRAM array.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Gang Liu AU - Liang Fang PY - 2017/04 DA - 2017/04 TI - Analysis and Behavioral Modeling of TiO2-based Resistance Switching Device BT - 2017 6th International Conference on Energy, Environment and Sustainable Development (ICEESD 2017) PB - Atlantis Press SN - 2352-5401 UR - https://doi.org/10.2991/iceesd-17.2017.21 DO - https://doi.org/10.2991/iceesd-17.2017.21 ID - Liu2017/04 ER -