FinFET Reliability Analysis by Forward Gated-Diode Method

DOI

10.2991/icemie-16.2016.2How to use a DOI?

Keywords

FinFET; R-G current; stress; interface state; oxide trap; reliability issue

Abstract

The reliability issue of the FinFET is studied in details in this paper by the forward gated-diode R-G current method. Extraction of the stress induced interface states and oxide traps of FinFET is performed from a series of the R-G current measurement and developed physics expression. As the result, the interface states can be extracted by the relationship between the net increase value of the maximum substrate current ( Ipeak) and stress time; and the oxide trap can be reflected by the drift of gate voltage ( Vg) corresponding to Ipeak.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Ming Fang
AU  - Jin He
AU  - Wen Wu
AU  - Wei Zhao
AU  - Ruonan Wang
AU  - Ping He
AU  - Lei Song
PY  - 2016/04
DA  - 2016/04
TI  - FinFET Reliability Analysis by Forward Gated-Diode Method
BT  - Proceedings of the 2016 International Conference on Electrical, Mechanical and Industrial Engineering
PB  - Atlantis Press
SP  - 6
EP  - 9
SN  - 2352-5401
UR  - https://doi.org/10.2991/icemie-16.2016.2
DO  - 10.2991/icemie-16.2016.2
ID  - Fang2016/04
ER  -