The Research on over current switch-off simulation of IGBT level in parallel connection

DOI

10.2991/icmit-16.2016.4How to use a DOI?

Keywords

IGBT;Parallel Connection;Switch-Off;RBSOA;Simulation; Over Current

Abstract

IGBT chips are basic structure of power electronic devices in the power grid system. The IGBT module with high current capability needs multi chips parallel connection. Because there are different performance parameters of the IGBT chips in the Wafer, it is necessary to select the parameters of the IGBT chips for the IGBT modules to make the performance parameters of chips as consistent as possible. However, it is unknown that what the influence of performance parameter differences between IGBT chips on the overall performance of the module such as IGBT modules' switch-off and RBSOA characteristics is. In addition, switching state of each single IGBT chip is not monitored when the whole module is on working state. This paper is trying to demonstrate a method to research the multi parallel chips on the performance of different parameters effects of each single IGBT chip switch-off Process, which is based on the T-CAD software tool.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Ge Zhao
AU  - Mingchao Gao
AU  - Yaohua Wang
AU  - Jiang Liu
AU  - Rui Jin
AU  - Jialiang Wen
PY  - 2016/04
DA  - 2016/04
TI  - The Research on over current switch-off simulation of IGBT level in parallel connection
BT  - Proceedings of the 2016 3rd International Conference on Mechatronics and Information Technology
PB  - Atlantis Press
SP  - 18
EP  - 21
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmit-16.2016.4
DO  - 10.2991/icmit-16.2016.4
ID  - Zhao2016/04
ER  -