Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015

Cu2ZnSnSe4 Thin Films Prepared by Chemical Method with Different Heating Technologies

Authors
Kegao Liu, Nianjing Ji, Yong Xu, Lei Shi
Corresponding Author
Kegao Liu
Available Online December 2015.
DOI
https://doi.org/10.2991/icmmcce-15.2015.102How to use a DOI?
Keywords
Heating mode, Cu2ZnSnSe4, absorption layer material, phase, morphology
Abstract
Cu2ZnSnSe4 thin films were prepared by spin-coating and chemical co-reduction with different heating modes. The phases of obtained samples were characterized by X-ray diffraction (XRD). The size and morphology of the products were observed by scanning electron microscope (SEM). Experimental results show that, the intensity of the XRD peaks of the samples was not significantly enhanced by segmented heating, but the XRD peak for (200) crystal plane appeared. The change of the reaction process in the tube furnace did not significantly improve crystallization and phase of the films. The technology with heating the precursor failed to significantly improve the film crystallinity while the effects of reaction conditions affect the morphology significantly.
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Proceedings
2015 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering
Part of series
Advances in Computer Science Research
Publication Date
December 2015
ISBN
978-94-6252-133-9
ISSN
2352-538X
DOI
https://doi.org/10.2991/icmmcce-15.2015.102How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Kegao Liu
AU  - Nianjing Ji
AU  - Yong Xu
AU  - Lei Shi
PY  - 2015/12
DA  - 2015/12
TI  - Cu2ZnSnSe4 Thin Films Prepared by Chemical Method with Different Heating Technologies
BT  - 2015 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering
PB  - Atlantis Press
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmcce-15.2015.102
DO  - https://doi.org/10.2991/icmmcce-15.2015.102
ID  - Liu2015/12
ER  -