Proceedings of the 2017 5th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering (ICMMCCE 2017)

Surface Passivation Process Study with Polyimide for High Voltage IGBT

Authors
Guoqing Leng, Li Gong, Tao Zhu, Di Wu, Jiang Liu, Rui Jin, Jialiang Wen, Yan Pan
Corresponding Author
Guoqing Leng
Available Online September 2017.
DOI
10.2991/icmmcce-17.2017.81How to use a DOI?
Abstract

In this paper, high voltage high power insulated gate bipolar transistors (IGBT) were fabricated with the passivation layer by photosensitive polyimide (PSPI) process. The PSPI was spin coated on a silicon substrate. The soft bake conditions were firstly discussed. In consideration of thermal properties, a temperature hard bake process was carefully optimized. Finally, the polyimide passivation layer was hardened by exposure to nitrogen at 120 C for 60min+160 C for 60min+240 C for 80min+280 C for 30min+350 C for 60min. Using this optimized cured process, the outgassing effect in post-fabrication heat treatment can be easily eliminated. Threshold Voltage swings observed on IGBTs power devices before and after H3TRB have been correlated to the presence of a PSPI passivation layer. As a result, it verifies passivation quality of the PSPI layer.

Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2017 5th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering (ICMMCCE 2017)
Series
Advances in Engineering Research
Publication Date
September 2017
ISBN
10.2991/icmmcce-17.2017.81
ISSN
2352-5401
DOI
10.2991/icmmcce-17.2017.81How to use a DOI?
Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Guoqing Leng
AU  - Li Gong
AU  - Tao Zhu
AU  - Di Wu
AU  - Jiang Liu
AU  - Rui Jin
AU  - Jialiang Wen
AU  - Yan Pan
PY  - 2017/09
DA  - 2017/09
TI  - Surface Passivation Process Study with Polyimide for High Voltage IGBT
BT  - Proceedings of the 2017 5th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering (ICMMCCE 2017)
PB  - Atlantis Press
SP  - 424
EP  - 429
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmmcce-17.2017.81
DO  - 10.2991/icmmcce-17.2017.81
ID  - Leng2017/09
ER  -