Production of Single Crystals, Films and Characteristics of Schottky Diodes Based on 4H-SIC and its Solid Solutions
V.I. Altukhov, O.A. Mityugova, A.V. Sankin, V.F. Antonov, G.D. Kardashov, A.T. Rostova, S.V. Filippova
Available Online August 2019.
- 10.2991/isees-19.2019.50How to use a DOI?
- silicon carbide monocrystals; production of thin films; Schottky barrier height; SiC-AlN-based CVC diodes; sublimation; SiC-AlN solid solutions.
The article deals with the methods for producing silicon carbide (4H-SiC) mono-crystals and films using the Schottky barrier. A nonlinear model of the Schottky barrier height and a composite model for the CVC of the total emission current were developed. An induction heating method for producing SiC monocrystals at 2000-250000С was developed. On the basis of the full-scale model of this method, a patented unit for producing perfect SiC monocrystals was designed . Models of thin SiC film growth were analyzed.
- © 2019, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - V.I. Altukhov AU - O.A. Mityugova AU - A.V. Sankin AU - V.F. Antonov AU - G.D. Kardashov AU - A.T. Rostova AU - S.V. Filippova PY - 2019/08 DA - 2019/08 TI - Production of Single Crystals, Films and Characteristics of Schottky Diodes Based on 4H-SIC and its Solid Solutions BT - Proceedings of the International Symposium "Engineering and Earth Sciences: Applied and Fundamental Research" dedicated to the 85th anniversary of H.I. Ibragimov (ISEES 2019) PB - Atlantis Press SP - 566 EP - 570 SN - 2590-3217 UR - https://doi.org/10.2991/isees-19.2019.50 DO - 10.2991/isees-19.2019.50 ID - Altukhov2019/08 ER -