Study on the Preparation Technology of SiNx Thin Film by PECVD

DOI

10.2991/ism3e-15.2015.4How to use a DOI?

Abstract

To prepare SiNx thin film with good compactness, fast deposition rate and stable performance, plasma-enhanced chemical vapour deposition (PECVD) is adopted to study the influences of different technological parameters on the properties of SiNx thin film. The experimental results indicate that SiH4 and NH3 flow rate, temperature, radio-frequency power, pressure and other technological parameters all have influences on the properties of SiNx thin film. Among them, the flow ratio of SiH4/NH3 has crucial influences on the refractivity of SiNx; and SiH4 flow rate and radio-frequency power have important influences on the deposition rate of SiNx. According to the discussion results, the optimal technological conditions to prepare SiNx thin film are obtained, with the refractivity of SiNx of 2.2 and deposition rate of 34.79 nm/min. It is proved that PECVD can be utilized to prepare high-quality SiNx thin film with controllable refractivity and deposition rate.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Huawei Xu
AU  - Zhiyuan He
AU  - Qingli Huang
AU  - Dongxiang Luo
AU  - Jianyao Hu
AU  - Linyong Fan
PY  - 2015/11
DA  - 2015/11
TI  - Study on the Preparation Technology of SiNx Thin Film by PECVD
BT  - Proceedings of the 2015 International Symposium on Material, Energy and Environment Engineering
PB  - Atlantis Press
SP  - 13
EP  - 15
SN  - 2352-5401
UR  - https://doi.org/10.2991/ism3e-15.2015.4
DO  - 10.2991/ism3e-15.2015.4
ID  - Xu2015/11
ER  -