Proceedings of the 2015 International Conference on Industrial Technology and Management Science

The X-ray Radiation Response of CdZnTe Crystal Nuclear Detector

Authors
X.Y. Dai, H. Meng, Y.L. Zhang, J. Tao, R. Xu, J.J. Zhang, J. Huang, L. Wang, K. Tang, J.H. Min, L.J. Wang
Corresponding Author
X.Y. Dai
Available Online November 2015.
DOI
https://doi.org/10.2991/itms-15.2015.317How to use a DOI?
Keywords
CdZnTe; radiation response; radiation damage;
Abstract
The X-ray radiation response and radiation damage of CdZnTe (CZT) detector were studied in this paper. After rapid temperature annealing, the linearity of I-V curve was much better than before. Photo current of Au/CZT planar detector increased linearly with the X-ray intensity. An inflection point around 10-30 V was observed for different X-ray intensity. Below the inflection points, with the increase of applied voltage, photon current increased linearly, while the current still increased after the inflection point likely due to the illumination-related impact ionization effect. In addition, under exposure in strong X-ray intensity, the photo current remains unchanged before the inflection point while it changes significantly with after the inflection point.
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This is an open access article distributed under the CC BY-NC license.

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Proceedings
2015 International Conference on Industrial Technology and Management Science
Part of series
Advances in Computer Science Research
Publication Date
November 2015
ISBN
978-94-6252-123-0
ISSN
2352-538X
DOI
https://doi.org/10.2991/itms-15.2015.317How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - X.Y. Dai
AU  - H. Meng
AU  - Y.L. Zhang
AU  - J. Tao
AU  - R. Xu
AU  - J.J. Zhang
AU  - J. Huang
AU  - L. Wang
AU  - K. Tang
AU  - J.H. Min
AU  - L.J. Wang
PY  - 2015/11
DA  - 2015/11
TI  - The X-ray Radiation Response of CdZnTe Crystal Nuclear Detector
BT  - 2015 International Conference on Industrial Technology and Management Science
PB  - Atlantis Press
SN  - 2352-538X
UR  - https://doi.org/10.2991/itms-15.2015.317
DO  - https://doi.org/10.2991/itms-15.2015.317
ID  - Dai2015/11
ER  -