Proceedings of the 2018 Joint International Advanced Engineering and Technology Research Conference (JIAET 2018)

RF Design of The Temperature Compensation For The Quiescent Working Point of The Amplifier

Authors
Zhiqi Piao, Yuemin Ning, Qi Wang
Corresponding Author
Zhiqi Piao
Available Online March 2018.
DOI
10.2991/jiaet-18.2018.85How to use a DOI?
Keywords
power amplifier; bias circuit; temperature compensation
Abstract

The linearity and gain of RF power amplifier are greatly affected by the quiescent working point of the amplifier. In practice, the threshold opening voltage of the power amplifier changes with the temperature rise, which leads to the change of the quiescent working current, and which makes the linearity and gain deteriorate. In this paper, two kinds of temperature compensation circuits applied to the quiescent working point of power amplifier are presented. The temperature compensation of power amplifier is realized by using temperature sensor and operational amplifier, ensure that the power amplifier can maintain good linearity and gain at different temperature, and the circuit structure is simple and easy to debug.

Copyright
© 2018, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2018 Joint International Advanced Engineering and Technology Research Conference (JIAET 2018)
Series
Advances in Engineering Research
Publication Date
March 2018
ISBN
10.2991/jiaet-18.2018.85
ISSN
2352-5401
DOI
10.2991/jiaet-18.2018.85How to use a DOI?
Copyright
© 2018, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Zhiqi Piao
AU  - Yuemin Ning
AU  - Qi Wang
PY  - 2018/03
DA  - 2018/03
TI  - RF Design of The Temperature Compensation For The Quiescent Working Point of The Amplifier
BT  - Proceedings of the 2018 Joint International Advanced Engineering and Technology Research Conference (JIAET 2018)
PB  - Atlantis Press
SP  - 478
EP  - 481
SN  - 2352-5401
UR  - https://doi.org/10.2991/jiaet-18.2018.85
DO  - 10.2991/jiaet-18.2018.85
ID  - Piao2018/03
ER  -