Improved Performance of Multilayer TiON/TaON Structure as Gate Dielectric for InGaAs Metal-Oxide-Semiconductor Capacitor

DOI

10.2991/mebe-15.2015.77How to use a DOI?

Keywords

InGaAs MOS; multilayer composite gate dielectric; TaON interlayer; interface-state density

Abstract

The interfacial and electrical properties of the multilayer TiON/TaON/InGaAs and TaON/TiON/InGaAs metal-oxide-semiconductor (MOS) capacitors fabricated by alternately RF-sputtering method are investigated and compared. Experimental results show that the former exhibits lower interface-state density, smaller gate leakage current, larger equivalent dielectric constant and higher device reliability than the latter. This is attributed to the fact that the ultrathin TaON interlayer formed on sulfur-passivated InGaAs can effectively reduce the density of defective states and unpin the Femi level at the TaON/InGaAs interface, thus greatly improving the interfacial and electrical properties of the device.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Li-Sheng Wang
AU  - Jing-Ping Xu
AU  - Lu Liu
AU  - Han-Han Lu
PY  - 2015/04
DA  - 2015/04
TI  - Improved Performance of Multilayer TiON/TaON Structure as Gate Dielectric for InGaAs Metal-Oxide-Semiconductor Capacitor
BT  - Proceedings of the 2015 International Conference on Materials, Environmental and Biological Engineering
PB  - Atlantis Press
SP  - 324
EP  - 327
SN  - 2352-5401
UR  - https://doi.org/10.2991/mebe-15.2015.77
DO  - 10.2991/mebe-15.2015.77
ID  - Wang2015/04
ER  -