Photoelectronic Properties of MoS2/CdS Thin Film Heterojunction
- 10.2991/meic-15.2015.101How to use a DOI?
- MoS2/CdS heterojunction film; optical absorption; I-V; photovoltaic effect
We report the photoelectronic properties of MoS2/CdS heterojunction films fabricated via rapid chemical vapor deposition (CVD) and chemical bath deposition (CBD). Silver-doped MoS2 thin films were deposited on prepared indium tin oxide substrates via CVD, and then CdS films were prepared on the surfaces of the MoS2 thin films via CBD. The MoS2/CdS heterojunction has strong optical electronic properties. It shows an open-circuit voltage of 0.66 V and a short-circuit current density of 0.227 × 10-6 A/cm2 under illumination by a 100 mW light source, indicating that the device has good current–voltage (I–V) characteristics and pronounced photovoltaic behavior and can be used to fabricate high-quality heterojunction thin film solar cells.
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Chen Wu AU - Fan Yang AU - Yi Zhang AU - Kai Wu AU - Xiying Ma PY - 2015/04 DA - 2015/04 TI - Photoelectronic Properties of MoS2/CdS Thin Film Heterojunction BT - Proceedings of the 2015 International Conference on Mechatronics, Electronic, Industrial and Control Engineering PB - Atlantis Press SP - 436 EP - 439 SN - 2352-5401 UR - https://doi.org/10.2991/meic-15.2015.101 DO - 10.2991/meic-15.2015.101 ID - Wu2015/04 ER -