Dielectric Properties Extraction of Coplanar Propagation Waveguides on High Resistivity Silicon Substrates

DOI

10.2991/meic-15.2015.123How to use a DOI?

Keywords

High resistivity silicon (HR-Si); complex permittivity; coplanar waveguide; dielectric extraction; parameters S.

Abstract

The dielectric properties of coplanar propagation waveguides (CPW) designed and fabricated on high resistivity silicon substrates are investigated. These CPWs exhibited transmission losses around 0.4 dB/mm at 50 GHz. In particular, temperature-dependent measurements show very low deviations. The complex relative permittivity and loss angle tangents are extracted through adequate TEM analytical modeling. It is shown that the results are affected by parasitic peaks that are intrinsically linked with the extraction of the characteristic impedance. To overcome this issue, a numerical resolution is proposed, based on a modelling of the transmission parameter S21 associated with the implementation of a bidimensionnal Newton-Raphson algorithm for the resolution of the inverse problem. Both methods give nearly identical results in terms of dielectric properties, confirming the validity and complementarity of the analytical and numerical models.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Download article (PDF)

TY  - CONF
AU  - Qing Lv
AU  - Nicolas Defrance
AU  - Kamel Haddadi
AU  - Fu Chao
AU  - Zhao Hua
AU  - Ma Lujuan
PY  - 2015/04
DA  - 2015/04
TI  - Dielectric Properties Extraction of Coplanar Propagation Waveguides on High Resistivity Silicon Substrates
BT  - Proceedings of the 2015 International Conference on Mechatronics, Electronic, Industrial and Control Engineering
PB  - Atlantis Press
SP  - 539
EP  - 542
SN  - 2352-5401
UR  - https://doi.org/10.2991/meic-15.2015.123
DO  - 10.2991/meic-15.2015.123
ID  - Lv2015/04
ER  -