Preparation of low voltage ZnO Varistor using point seed
- 10.2991/mmme-16.2016.88How to use a DOI?
- ZnO; varistor ceramics; low voltage; point seed
The low pressure of ZnO varistor ceramics were prepared with 99.5 mol % ZnO +0.5 mol % CaCO3. Subse-quently, placed in a constant temperature conditions of 1420 for 10 h, and cooking in boiling water long enough. The microstructure of the particle size analyzed by optical microscope, the doped ZnO varistors sheet seed analyzed by field emission scanning electron microscopy, the phase structure analyzed by X- ray diffrac-tion. The results showed that this method can be prepared the best electrical properties of low-voltage ZnO varistor ceramics. The varistor voltage is 11 V/mm, the leakage current is 0.018 mA and nonlinear coefficient it is 15.6.
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Zhefeng Xu AU - Ju Rong AU - Xiaohua Yu AU - Zhaolin Zhan PY - 2016/10 DA - 2016/10 TI - Preparation of low voltage ZnO Varistor using point seed BT - Proceedings of the 2016 4th International Conference on Mechanical Materials and Manufacturing Engineering PB - Atlantis Press SP - 388 EP - 391 SN - 2352-5401 UR - https://doi.org/10.2991/mmme-16.2016.88 DO - 10.2991/mmme-16.2016.88 ID - Xu2016/10 ER -