Analysis and Design of Charge Pump Configurations Based on Voltage Doubler for RFID
Authors
Mengxin Zhang, Jiancheng Li, Hongyi Wang, Cong Li, Li Yang
Corresponding Author
Mengxin Zhang
Available Online May 2016.
- DOI
- 10.2991/wartia-16.2016.340How to use a DOI?
- Keywords
- Charge pump, Voltage doubler, RFID, Body effect.
- Abstract
Charge pump is the configuration which can provide a voltage gain to program nonvolatile memory in radio frequency identification (RFID). In this paper, A complete theory of charge pump is presented, which shows that the influence of body effect on power dissipation and power efficiency is more and more obvious. To solve this problem, a voltage doubler applying new body biasing is proposed, which has been implemented under 0.18 CMOS process. The 10-stages proposed charge pump with pumping capacitor of 1pF at the clock of 2MHz can show a maximum power efficiency of 84%, in addition, it also can boost the voltage 1.8V input to 18.6V under 2 output current successfully.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Mengxin Zhang AU - Jiancheng Li AU - Hongyi Wang AU - Cong Li AU - Li Yang PY - 2016/05 DA - 2016/05 TI - Analysis and Design of Charge Pump Configurations Based on Voltage Doubler for RFID BT - Proceedings of the 2016 2nd Workshop on Advanced Research and Technology in Industry Applications PB - Atlantis Press SP - 1714 EP - 1719 SN - 2352-5401 UR - https://doi.org/10.2991/wartia-16.2016.340 DO - 10.2991/wartia-16.2016.340 ID - Zhang2016/05 ER -