Effects and methods of the BRL removal in solar cell

DOI

10.2991/wartia-17.2017.68How to use a DOI?

Keywords

Boron diffusion, solar cell, BRL, carrier lifetime, CET

Abstract

Boron diffusion is a conventional process in N-type silicon solar cells fabrication. The boron-rich layer (BRL) usually formed on the surface of silicon wafer in boron diffusion process, and the effective carrier lifetime can be sharply reduced by the BRL. In this paper, three methods were used to remove the BRL: high temperature nitric acid (HT-HNO3) oxidation, chemical etching treatment (CET) and low temperature thermal oxidation (LTO). ECV and TEM are employed to characterized the dopant profiles and morphology of the silicon substrate surface after removing the BRL with different methods. Furthermore, the effective carrier lifetime of the samples is obtained by sinton instrument, and the reflectivity of the samples is measured. By analysis of the result date, we can conclude that the CET method can effectively remove the BRL and cause less carrier lifetime degradation comparing with other methods. What’s more, the CET method have the most less influence on the doping profiles while removing the BRL. However, the CET method will cause a greater increase of the surface reflectivity than other methods.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Zhi-yong Yu
AU  - Shuai Jiang
AU  - Xiaowan Dai
AU  - Ke Tao
AU  - Chao Zhang
AU  - Shu-wang Duo
AU  - Rui Jia
PY  - 2017/11
DA  - 2017/11
TI  - Effects and methods of the BRL removal in solar cell
BT  - Proceedings of the 3rd Workshop on Advanced Research and Technology in Industry (WARTIA 2017)
PB  - Atlantis Press
SP  - 352
EP  - 357
SN  - 2352-5401
UR  - https://doi.org/10.2991/wartia-17.2017.68
DO  - 10.2991/wartia-17.2017.68
ID  - Yu2017/11
ER  -