Proceedings of the 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)

A solution to high frequency oscillation in the driving loop of silicon microgyroscope

Authors
Jian Zhou, Anping Qiu, Guoming Xia, Yang Zhao
Corresponding Author
Jian Zhou
Available Online November 2016.
DOI
https://doi.org/10.2991/aest-16.2016.45How to use a DOI?
Keywords
silicon microgyroscope; driving loop; oscillation; interface.
Abstract
Parasitic capacitances are unavoidable in silicon microgyroscope because of the limitation of MEMS technology and packaging. Due to the existence of parasitic capacitance between the driving electrodes and driving detection electrodes in the gyroscope, another possible oscillation loop is formed, which leads to unwanted high frequency oscillation in the driving loop. In order to solve the problem caused by the parasitic capacitances, a new type of interface circuit based on two-stage integrators is presented in this paper. Firstly, a theoretical analysis model of the proposed circuit is established, then it was simulated in Cadence/PSPice with the established electrical equivalent model of the driving module. Experimental results indicate that the proposed interface circuit can effectively eliminate high frequency oscillation in the drive loop, and it has an equivalent input current noise of 24.7fA/√Hz, corresponding to a capacitance resolution of 0.061aF/√Hz.
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Proceedings
2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)
Part of series
Advances in Intelligent Systems Research
Publication Date
November 2016
ISBN
978-94-6252-257-2
ISSN
1951-6851
DOI
https://doi.org/10.2991/aest-16.2016.45How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Jian Zhou
AU  - Anping Qiu
AU  - Guoming Xia
AU  - Yang Zhao
PY  - 2016/11
DA  - 2016/11
TI  - A solution to high frequency oscillation in the driving loop of silicon microgyroscope
BT  - 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)
PB  - Atlantis Press
SP  - 345
EP  - 352
SN  - 1951-6851
UR  - https://doi.org/10.2991/aest-16.2016.45
DO  - https://doi.org/10.2991/aest-16.2016.45
ID  - Zhou2016/11
ER  -