Development of >10kv 4H-SiC SBD junction extension termination

DOI

10.2991/aest-16.2016.111How to use a DOI?

Keywords

4H-SiC; power device; termination; JTE.

Abstract

10kV 4H-SiC JBS diodes with various junction extension terminations have been experimentally realized. The protection efficiencies of single JTE and modulation JTE terminations were investigated by means of numerical simulations. The JTE dose window to achieve the high protection efficiency has been enlarged, which indicates the robustness to the deviation of effective JTE dose and SiO2/SiC interface charge. The samples with the single JTE, two-zone JTE, three-zone JTE and improved three-zone JTE terminations were fabricated. With the modulation JTE, the typical breakdown voltage of 13.5 kV corresponding to protection efficiency of 95% has been achieved, and the various JTE terminations were compared and discussed.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Runhua Huang
AU  - Yonghong Tao
AU  - Ling Wang
AU  - Gang Chen
AU  - Song Bai
AU  - Rui Li
AU  - Yun Li
AU  - Zhifei Zhao
PY  - 2016/11
DA  - 2016/11
TI  - Development of >10kv 4H-SiC SBD junction extension termination
BT  - Proceedings of the 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)
PB  - Atlantis Press
SP  - 828
EP  - 833
SN  - 1951-6851
UR  - https://doi.org/10.2991/aest-16.2016.111
DO  - 10.2991/aest-16.2016.111
ID  - Huang2016/11
ER  -