INFLUENCE OF ELASTIC STRAINS ON ZONE ENERGY DIAGRAM OF In1 – xGaxAs/GaAs HETEROSTRUCTURE
Authors
L.S. Lunin, V.V. Nefedov
Corresponding Author
L.S. Lunin
Available Online April 2018.
- DOI
- 10.2991/aime-18.2018.69How to use a DOI?
- Keywords
- strained heterostructure, Gallium Arsenide, Indium Gallium Arsenide, deformation, strains, zone diagram
- Abstract
The paper consists of calculation of strains in the In1–xGaxAs/GaAs heterostructure and their dependence on relation between the thicknesses of contacting semiconductors. It also features the examination of how concentration of components and relation between the thicknesses of layers influences the key parameters of the zone energy diagram of heterostructure.
- Copyright
- © 2018, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - L.S. Lunin AU - V.V. Nefedov PY - 2018/04 DA - 2018/04 TI - INFLUENCE OF ELASTIC STRAINS ON ZONE ENERGY DIAGRAM OF In1 – xGaxAs/GaAs HETEROSTRUCTURE BT - Proceedings of the International Conference "Actual Issues of Mechanical Engineering" (AIME 2018) PB - Atlantis Press SP - 358 EP - 362 SN - 2352-5401 UR - https://doi.org/10.2991/aime-18.2018.69 DO - 10.2991/aime-18.2018.69 ID - Lunin2018/04 ER -