Trench based stress modulation structure for 90nm-gate CESL strained N MOSFET
Authors
Qian Luo, Changgui Tan, Xiangzhan Wang, Bin Liu
Corresponding Author
Qian Luo
Available Online March 2017.
- DOI
- 10.2991/amcce-17.2017.143How to use a DOI?
- Keywords
- CESL; Trench; Strained NMOSFET; SiN
- Abstract
A novel trench based stress modulation structure for strained 90nm-gate N MOSFET is demonstrated in this letter. The numerical simulation using SENTAURUS SPROCESS shows that, with this structure, the channel stress can be changed from compressive to tensile in a case of compressive CESL strained device. The relationships between the channel stress and the trenches' size are also investigated and it is deduced that the optimized trench depth and width can both be set to be 0.4um. With the trenches' size optimized, the trench based device can achieve an output current 24% higher than that of the N MOSFET without the trench based structure.
- Copyright
- © 2017, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Qian Luo AU - Changgui Tan AU - Xiangzhan Wang AU - Bin Liu PY - 2017/03 DA - 2017/03 TI - Trench based stress modulation structure for 90nm-gate CESL strained N MOSFET BT - Proceedings of the 2017 2nd International Conference on Automation, Mechanical Control and Computational Engineering (AMCCE 2017) PB - Atlantis Press SP - 810 EP - 813 SN - 2352-5401 UR - https://doi.org/10.2991/amcce-17.2017.143 DO - 10.2991/amcce-17.2017.143 ID - Luo2017/03 ER -