Electrical Properties and Photo-response of FETs based on Few-layer WS2 Nanoflakes

DOI

10.2991/ame-16.2016.85How to use a DOI?

Keywords

Few-layer WS2 nanoflakes, Field effect transistor (FET), Electrical properties, Photo-response

Abstract

The photo-electrical properties of few-layer WS2 nanoflakes, fabricated by mechanical exfoliation, were systematically studied in this paper. The few-layer WS2 FETs are n-type and possess a high gate modulation (On/Off ratio is larger than 104) and a relatively high carrier mobility ( ). The photo-electrical properties of the device shows sensitive photo response, high photoresponsivity ( ), quick response time ( ), high external quantum efficiency ( ), and high detection rate ( ) to red light(638nm). These results showed that the extraordinary performance of the device based on few-layer WS2, which might open a new way to develop few-layer WS2-based material in the application of FETs and optoelectronics.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Hang Yang
AU  - Shi-Qiao Qin
AU  - Fei Wang
AU  - Jin-Yue Fang
AU  - Xue-Ao Zhang
PY  - 2016/06
DA  - 2016/06
TI  - Electrical Properties and Photo-response of FETs based on Few-layer WS2 Nanoflakes
BT  - Proceedings of the 2nd Annual International Conference on Advanced Material Engineering (AME 2016)
PB  - Atlantis Press
SP  - 516
EP  - 522
SN  - 2352-5401
UR  - https://doi.org/10.2991/ame-16.2016.85
DO  - 10.2991/ame-16.2016.85
ID  - Yang2016/06
ER  -