Structures and Photoelectric Properties of Ce and Co Doped CuInTe2 Semiconductor

DOI

10.2991/ame-16.2016.100How to use a DOI?

Keywords

CuIn1-x-yCexCoyTe2, Chalcopyrite Structure, Semiconductor, Band Gap.

Abstract

The samples of CuIn1-x-yCexCoyTe2 were successfully synthesized by vacuum arc-melting method. The structure and optical and electric properties of Ce and Co doped CuInTe2 have been investigated using Powder X-ray diffraction(XRD), scanning electron microscopy(SEM), ultraviolet and visible spectrophotometer (UV–vis), respectively. The result shows that the Ce and Co doped CIT has the chalcopyrite structure with a space group of I-42d.The lattice parameters shows no obvious regulation with the increase of Co content. The SEM morphologies indicate that the grain sizes tend to decrease with the increase of Co content in CuIn1-x-yCexCoyTe2 semiconductor. The band gap Eg also increases from 1.17eV to 1.27eV. It reveals that the increase of Co content is helpful for the absorption of spectra with special frequencies.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Shuai Li
AU  - Yong-Quan Guo
PY  - 2016/06
DA  - 2016/06
TI  - Structures and Photoelectric Properties of Ce and Co Doped CuInTe2 Semiconductor
BT  - Proceedings of the 2nd Annual International Conference on Advanced Material Engineering (AME 2016)
PB  - Atlantis Press
SP  - 605
EP  - 608
SN  - 2352-5401
UR  - https://doi.org/10.2991/ame-16.2016.100
DO  - 10.2991/ame-16.2016.100
ID  - Li2016/06
ER  -