GaN Films under Different Growth Mechanisms Studied by Synchrotron X-ray Absorption Spectroscopy

DOI

10.2991/ame-16.2016.162How to use a DOI?

Keywords

synchrotron radiation X-ray absorption, MOCVD, MBE, GaN, residual strain

Abstract

Synchrotron radiation X-ray absorptionmeasurements wereperformed to study the structure of Si-doped n-type GaN layers grown on sapphire by metalorganic chemical vapor deposition (MOCVD) and undoped GaN epitaxial layers grown on Si by molecular beam epitaxy (MBE).It was found that the anisotropic characteristic of p-orbital from GaN/sapphire grown by MOCVD is somehow larger than GaN/Si grown by MBE.In addition, values of the lattice constant of different GaN films were deduced from the interatomic distances in the second coordination shell around Ga byextended X-ray absorption fine structure (EXAFS) analysis and the residual strain of the films was then deduced. The calculation results shows that the strain type is different in the two sets of samples which is due to the different substrate and AlN buffer layer.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Qing-Xuan Li
AU  - Yu-Jia Liu
AU  - Yao Liu
AU  - Yi Liang
AU  - Hao-Hsiung Lin
AU  - Jyh-Fu Lee
AU  - Na Lu
AU  - Ian T. Ferguson
AU  - Ling-Yu Wan
AU  - Zhe Chuan Feng
PY  - 2016/06
DA  - 2016/06
TI  - GaN Films under Different Growth Mechanisms Studied by Synchrotron X-ray Absorption Spectroscopy
BT  - Proceedings of the 2nd Annual International Conference on Advanced Material Engineering (AME 2016)
PB  - Atlantis Press
SP  - 1003
EP  - 1007
SN  - 2352-5401
UR  - https://doi.org/10.2991/ame-16.2016.162
DO  - 10.2991/ame-16.2016.162
ID  - Li2016/06
ER  -