The investigation of AlGaN/GaN HEMT failure mechanisms under different temperature conditions

DOI

10.2991/ameii-16.2016.190How to use a DOI?

Keywords

AlGaN/GaN HEMT, the Schottky barrier, junction temperature

Abstract

To explore degradation law and failure mechanisms of AlGaN/GaN HEMT under different temperature conditions, the step-temperature stress experiments are carried out. The results show that the drain-source current decreases with the aging time when the junction temperature range from 139 to 200 ; while the drain-source current increases with the aging time when the junction temperature range from 200 to 352 . When the junction temperature is less than 200 , the AlGaN ionized donor atoms cause the Schottky barrier height of the AlGaN/GaN HEMT device to rise; and when the junction temperature is higher than 200 , the diffusion of impurities oxygen in surface causes the Schottky barrier height of the AlGaN/GaN HEMT device to fall. The barrier height can affect the threshold voltage which leads to the change of drain-source current. Therefore, the degradation of the drain-source current is caused by the change of the Schottky barrier height.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Chunsheng Guo
AU  - YunXiang Ren
AU  - Li Gao
AU  - Hui Zhu
AU  - Shiwei Li
PY  - 2016/04
DA  - 2016/04
TI  - The investigation of AlGaN/GaN HEMT failure mechanisms under different temperature conditions
BT  - Proceedings of the 2nd International Conference on Advances in Mechanical Engineering and Industrial Informatics (AMEII 2016)
PB  - Atlantis Press
SP  - 995
EP  - 1000
SN  - 2352-5401
UR  - https://doi.org/10.2991/ameii-16.2016.190
DO  - 10.2991/ameii-16.2016.190
ID  - Guo2016/04
ER  -