The investigation of AlGaN/GaN HEMT failure mechanisms under different temperature conditions
- 10.2991/ameii-16.2016.190How to use a DOI?
- AlGaN/GaN HEMT, the Schottky barrier, junction temperature
To explore degradation law and failure mechanisms of AlGaN/GaN HEMT under different temperature conditions, the step-temperature stress experiments are carried out. The results show that the drain-source current decreases with the aging time when the junction temperature range from 139 to 200 ; while the drain-source current increases with the aging time when the junction temperature range from 200 to 352 . When the junction temperature is less than 200 , the AlGaN ionized donor atoms cause the Schottky barrier height of the AlGaN/GaN HEMT device to rise; and when the junction temperature is higher than 200 , the diffusion of impurities oxygen in surface causes the Schottky barrier height of the AlGaN/GaN HEMT device to fall. The barrier height can affect the threshold voltage which leads to the change of drain-source current. Therefore, the degradation of the drain-source current is caused by the change of the Schottky barrier height.
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Chunsheng Guo AU - YunXiang Ren AU - Li Gao AU - Hui Zhu AU - Shiwei Li PY - 2016/04 DA - 2016/04 TI - The investigation of AlGaN/GaN HEMT failure mechanisms under different temperature conditions BT - Proceedings of the 2nd International Conference on Advances in Mechanical Engineering and Industrial Informatics (AMEII 2016) PB - Atlantis Press SP - 995 EP - 1000 SN - 2352-5401 UR - https://doi.org/10.2991/ameii-16.2016.190 DO - 10.2991/ameii-16.2016.190 ID - Guo2016/04 ER -