A Novel 8T SRAM Cell with Improved Read and Write Margins
Authors
Song Li, Zhiting Lin, Jiubai Zhang, Yuchun Peng, Xiulong Wu
Corresponding Author
Song Li
Available Online May 2015.
- DOI
- 10.2991/asei-15.2015.128How to use a DOI?
- Keywords
- Single-bit; SRAM; Stability; RSNM; HSNM; WM
- Abstract
A highly stable 8T SRAM cell is presented to improve the Static Noise Margin (SNM). The proposed 8T SRAM cell uses a single-bit line structure to perform read and write operation. The design enhances the write ability by breaking-up the feedback loop of the inverter pair. It also improves the read stability by eliminating the effects from the bit-line. The simulations show that the proposed 8T cell offers 2.07x read static noise margin, 1.41x and 2.60x in write ‘0’ margin compared to the conventional 6T cell and 7T cell, respectively. Besides, the proposed structure has a significant improvement in writing ‘1’ operation and HSNM.
- Copyright
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Song Li AU - Zhiting Lin AU - Jiubai Zhang AU - Yuchun Peng AU - Xiulong Wu PY - 2015/05 DA - 2015/05 TI - A Novel 8T SRAM Cell with Improved Read and Write Margins BT - Proceedings of the 2015 International conference on Applied Science and Engineering Innovation PB - Atlantis Press SP - 679 EP - 682 SN - 2352-5401 UR - https://doi.org/10.2991/asei-15.2015.128 DO - 10.2991/asei-15.2015.128 ID - Li2015/05 ER -