Effect of Femtosecond Irradiation Laser on the Optical Properties of GaAs Solar Cell

DOI

10.2991/icaemt-15.2015.31How to use a DOI?

Keywords

Femtosecond laser; Solar cell; Damage threshold; TiO2/SiO2 film.

Abstract

The results of damage on the GaAs solar cells surface irradiated by femtosecond laser show that: the anti-reflective layer irradiated by laser is damaged when the laser energy is more than 1 uJ; and when the energy is increased to 5uJ, the anti-reflective layer is completely damaged. The comparison between theoretical damage depth and the experimental results reveal that: similarity between the theoretical calculation and experimental results is high when the laser energy is less than 6 uJ. There is no obvious change of the reflectance after irradiated by 1 uJ pulse energy which is about 8%, but it is increased to 32%, 38% after the pulse energy is increased to the 2 uJ and 3 uJ. The quantum efficiency are decreased to 13.71%, 55.78%, 83.01% at 500 nm and 3.94%, 35.52%, 46.78% at 800 nm when the cells are irradiated at 1 J, 2 J, 3 J.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Ruifang Chen
AU  - Zhiguo Shi
AU  - Yunxia Ye
AU  - Xue Qing
AU  - Yinqun Hua
PY  - 2015/08
DA  - 2015/08
TI  - Effect of Femtosecond Irradiation Laser on the Optical Properties of GaAs Solar Cell
BT  - Proceedings of the 2015 International Conference on Advanced Engineering Materials and Technology
PB  - Atlantis Press
SP  - 157
EP  - 165
SN  - 2352-5401
UR  - https://doi.org/10.2991/icaemt-15.2015.31
DO  - 10.2991/icaemt-15.2015.31
ID  - Chen2015/08
ER  -