Proceedings of the 2016 5th International Conference on Advanced Materials and Computer Science

Investigation of the lower temperature SiO2 surface passivation technology on InAs/GaSb superlattice detectors

Authors
Ruiqin Peng, Shujie Jiao, Hongtao Li, Liancheng Zhao
Corresponding Author
Ruiqin Peng
Available Online June 2016.
DOI
10.2991/icamcs-16.2016.80How to use a DOI?
Keywords
superlattice, silicon oxide, surface-passivation, mechniasm.
Abstract

we report on the investigation of effective SiO2 passivated layer deposited at low temperatures. Comparison with the unpassivated photodiodes, at 77 K, the dark current density is reduced by one order of magnitude is achieved by introducing SiO2-passivated layer deposition technology at a lower temperature of 75 °C. The temperature-dependence and bias-dependence of the dark current are studied experimentally and correlated to the theory, and then the contribution of each dark current mechanism is also identified.

Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2016 5th International Conference on Advanced Materials and Computer Science
Series
Advances in Engineering Research
Publication Date
June 2016
ISBN
10.2991/icamcs-16.2016.80
ISSN
2352-5401
DOI
10.2991/icamcs-16.2016.80How to use a DOI?
Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Ruiqin Peng
AU  - Shujie Jiao
AU  - Hongtao Li
AU  - Liancheng Zhao
PY  - 2016/06
DA  - 2016/06
TI  - Investigation of the lower temperature SiO2 surface passivation technology on InAs/GaSb superlattice detectors
BT  - Proceedings of the 2016 5th International Conference on Advanced Materials and Computer Science
PB  - Atlantis Press
SP  - 377
EP  - 381
SN  - 2352-5401
UR  - https://doi.org/10.2991/icamcs-16.2016.80
DO  - 10.2991/icamcs-16.2016.80
ID  - Peng2016/06
ER  -