Texturization of Monocrystalline Silicon Wafers with K3PO4 and K2SiO3 Solutions

DOI

10.2991/icectt-15.2015.110How to use a DOI?

Keywords

monocrystalline silicon; potassium phosphate tribasic; potassium silicate; size; density

Abstract

The pyramid construction was formed with different K3PO4 and K2SiO3 concentrations under different temperatures. The pyramid size, density and uniformity on monocrystalline silicon surface have been studied. We found that the temperature has a crucial influence on pyramid density; the K2SiO3 concentration has a significant influence on pyramid size and density. With the temperature increasing (from 50 to 90 ), the density varies from 6.91% to 29.45%. The increase in K2SiO3 concentration (from 1wt% to 7wt%) resulted in the reductions of the pyramid size (from 2.37 m to 1.07 m ) and density (from 88.9 % to 10.5%). The increase in K3PO4 concentration (from 26% to 62%) resulted in the reductions of the pyramid size (from 2.48 m to 1.13 m) and density (from 77.7 % to 43.9%). the pyramid size and density obtained in the optimal etching conditions (62wt% K3PO4, 85 , and 5 min) are close to 1.13 m and 52.0%. The uniform pyramids are obtained in the conditions (30wt% K3PO4, 2wt% K2SiO3, 90 , and 5 min), its biggest size of pyramid is 3.12 m and mean size is 1.00 m. This technique may be probably used in the texturization process for high-efficiency silicon solar cells.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Ruizhi Luo
AU  - Junjun Ma
AU  - Shiqing Man
AU  - Zheng Jin
AU  - Yaqin Wang
AU  - Qiaoyun Ye
AU  - Jinbao Chen
PY  - 2015/11
DA  - 2015/11
TI  - Texturization of Monocrystalline Silicon Wafers with K3PO4 and K2SiO3 Solutions
BT  - Proceedings of the 2015 International Conference on Electromechanical Control Technology and Transportation
PB  - Atlantis Press
SP  - 576
EP  - 581
SN  - 2352-5401
UR  - https://doi.org/10.2991/icectt-15.2015.110
DO  - 10.2991/icectt-15.2015.110
ID  - Luo2015/11
ER  -