The study on the quasi-single crystalline silicon ingot produced with plate seed block layer

DOI

10.2991/iceep-18.2018.176How to use a DOI?

Keywords

quasi-single crystalline silicon ingot; crystalline growth; defects; silicon solar cell

Abstract

The quasi-single crystalline silicon directional casting processes with ultrathin plate seed layers were studied. The experiments results showed that the directional casting with the plate seed layer could solve the cross pattern issue on the quasi-single crystalline silicon wafers produced with square seed blocks, and decrease the thickness of the plate seed blocks to 15mm. The ratio of single crystalline silicon in the quasi-single crystalline silicon ingot increased from 65% to 85% by extending the silicon melting time from 15hours to 26hours and the crystalline growth time from 40hours to 76hours. The study on the defects in the ingot showed that the conversion efficiency of the quasi-single crystalline solar cells decreased with the defects increased from bottom to top in the ingot.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Shuaidi Song
AU  - Yang Cao
AU  - Tingxi Wu
AU  - Qiang Wang
PY  - 2018/09
DA  - 2018/09
TI  - The study on the quasi-single crystalline silicon ingot produced with plate seed block layer
BT  - Proceedings of the 2018 7th International Conference on Energy and Environmental Protection (ICEEP 2018)
PB  - Atlantis Press
SP  - 1008
EP  - 1012
SN  - 2352-5401
UR  - https://doi.org/10.2991/iceep-18.2018.176
DO  - 10.2991/iceep-18.2018.176
ID  - Song2018/09
ER  -