Proceedings of the 2017 6th International Conference on Energy, Environment and Sustainable Development (ICEESD 2017)

The study of Forming process and Modeling of Bidirectional Self-Rectifying Pt/TiO2/Al Structured RRAM

Authors
Gang Liu, Liang Fang
Corresponding Author
Gang Liu
Available Online April 2017.
DOI
https://doi.org/10.2991/iceesd-17.2017.40How to use a DOI?
Keywords
Resistive random access memory (RRAM), electroforming process, Pt/TiO2/Al, bidirectional self-rectifying.
Abstract
The forming process and SET-RESET mechanism of Pt/TiO2/Al resistive random access memory (RRAM) are investigated. Forming process was implemented by consecutive voltage sweep instead of one-step operation. After forming process, bidirectional self-rectifying characteristics was exhibited. In following SET and RESET operation with ñ3V bias, this device can be used as a selector-less device without additional process steps. The characteristics of normal resistive switching is explained by analytical model and verified through simulation.
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Proceedings
2017 6th International Conference on Energy, Environment and Sustainable Development (ICEESD 2017)
Part of series
Advances in Engineering Research
Publication Date
April 2017
ISBN
978-94-6252-328-9
ISSN
2352-5401
DOI
https://doi.org/10.2991/iceesd-17.2017.40How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Gang Liu
AU  - Liang Fang
PY  - 2017/04
DA  - 2017/04
TI  - The study of Forming process and Modeling of Bidirectional Self-Rectifying Pt/TiO2/Al Structured RRAM
BT  - 2017 6th International Conference on Energy, Environment and Sustainable Development (ICEESD 2017)
PB  - Atlantis Press
SP  - 206
EP  - 209
SN  - 2352-5401
UR  - https://doi.org/10.2991/iceesd-17.2017.40
DO  - https://doi.org/10.2991/iceesd-17.2017.40
ID  - Liu2017/04
ER  -