The study of Forming process and Modeling of Bidirectional Self-Rectifying Pt/TiO2/Al Structured RRAM

DOI

10.2991/iceesd-17.2017.40How to use a DOI?

Keywords

Resistive random access memory (RRAM), electroforming process, Pt/TiO2/Al, bidirectional self-rectifying.

Abstract

The forming process and SET-RESET mechanism of Pt/TiO2/Al resistive random access memory (RRAM) are investigated. Forming process was implemented by consecutive voltage sweep instead of one-step operation. After forming process, bidirectional self-rectifying characteristics was exhibited. In following SET and RESET operation with ñ3V bias, this device can be used as a selector-less device without additional process steps. The characteristics of normal resistive switching is explained by analytical model and verified through simulation.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Gang Liu
AU  - Liang Fang
PY  - 2017/04
DA  - 2017/04
TI  - The study of Forming process and Modeling of Bidirectional Self-Rectifying Pt/TiO2/Al Structured RRAM
BT  - Proceedings of the 2017 6th International Conference on Energy, Environment and Sustainable Development (ICEESD 2017)
PB  - Atlantis Press
SP  - 206
EP  - 209
SN  - 2352-5401
UR  - https://doi.org/10.2991/iceesd-17.2017.40
DO  - 10.2991/iceesd-17.2017.40
ID  - Liu2017/04
ER  -