The study of Forming process and Modeling of Bidirectional Self-Rectifying Pt/TiO2/Al Structured RRAM
Gang Liu, Liang Fang
Available Online April 2017.
- https://doi.org/10.2991/iceesd-17.2017.40How to use a DOI?
- Resistive random access memory (RRAM), electroforming process, Pt/TiO2/Al, bidirectional self-rectifying.
- The forming process and SET-RESET mechanism of Pt/TiO2/Al resistive random access memory (RRAM) are investigated. Forming process was implemented by consecutive voltage sweep instead of one-step operation. After forming process, bidirectional self-rectifying characteristics was exhibited. In following SET and RESET operation with ñ3V bias, this device can be used as a selector-less device without additional process steps. The characteristics of normal resistive switching is explained by analytical model and verified through simulation.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Gang Liu AU - Liang Fang PY - 2017/04 DA - 2017/04 TI - The study of Forming process and Modeling of Bidirectional Self-Rectifying Pt/TiO2/Al Structured RRAM BT - Proceedings of the 2017 6th International Conference on Energy, Environment and Sustainable Development (ICEESD 2017) PB - Atlantis Press SP - 206 EP - 209 SN - 2352-5401 UR - https://doi.org/10.2991/iceesd-17.2017.40 DO - https://doi.org/10.2991/iceesd-17.2017.40 ID - Liu2017/04 ER -