Proceedings of the 2016 4th International Conference on Machinery, Materials and Computing Technology

A Wideband Low Noise Amplifier Based on Distributed LC Network

Authors
Yaya Xie
Corresponding Author
Yaya Xie
Available Online March 2016.
DOI
10.2991/icmmct-16.2016.391How to use a DOI?
Keywords
wideband; low noise amplifier; CMOS; distributed LC network
Abstract

A CMOS wideband low noise amplifier (LNA) based on distributed LC network is presented in this paper. Employing the distributed LC network, the bandwidth of the low noise amplifier is greatly increased without sacrificing the gain of the amplifier. The amplifier is designed in 65nm CMOS process. Simulated result shows that the gain of the amplifier is 21.8 dB, while the 3dB bandwidth is 7.3 GHz from 21.5 GHz to 28.8 GHz. The input and output return loss are -13.6 dB and -16.5 dB at 24 GHz, respectively. The noise figure is 2.87 dB at 25.2 GHz and below 4 dB from 19.6 to 31.3 GHz. The amplifier consumes 14.9 mA current from 1.2 V voltage supply. The layout area of the amplifier is 0.66*0.48 mm2 including all pads.

Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2016 4th International Conference on Machinery, Materials and Computing Technology
Series
Advances in Engineering Research
Publication Date
March 2016
ISBN
10.2991/icmmct-16.2016.391
ISSN
2352-5401
DOI
10.2991/icmmct-16.2016.391How to use a DOI?
Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Yaya Xie
PY  - 2016/03
DA  - 2016/03
TI  - A Wideband Low Noise Amplifier Based on Distributed LC Network
BT  - Proceedings of the 2016 4th International Conference on Machinery, Materials and Computing Technology
PB  - Atlantis Press
SP  - 1962
EP  - 1966
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmmct-16.2016.391
DO  - 10.2991/icmmct-16.2016.391
ID  - Xie2016/03
ER  -