Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration
Yutaka Sawada, Shigeyuki Seki, Takayuki Uchida, Yoichi Hoshi, Mei-Han Wang, Hao Lei, Li-Xian Sun
Available Online June 2014.
- https://doi.org/10.2991/icmsa-15.2015.131How to use a DOI?
- ITO, Tin-doped In2O3, Spray chemical vapor deposition.
- Indium-Tin-Oxide (ITO, tin-doped In2O3) films with low resistivity (7.7×10-5 ohm cm) and high carrier electron concentration (1.8×1021 cm-3) was successfully prepared by spray chemical vapor deposision in air and post-deposition annealing in reducing atmosphere in our previous papers; Y. Sawada et al., Thin Solid Films, 409 (2002) 46-50 and Y. Sawada, Materials Sci. Forum, 437-438 (2003) 23-26. Doping one tin ion generated two carrier electrons at low concentration of tin. The relation between carrier electron concentration and tin concentration are discussed in the present paper to propose a nobel defect model.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Yutaka Sawada AU - Shigeyuki Seki AU - Takayuki Uchida AU - Yoichi Hoshi AU - Mei-Han Wang AU - Hao Lei AU - Li-Xian Sun PY - 2014/06 DA - 2014/06 TI - Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration BT - 2015 International Conference on Material Science and Applications (icmsa-15) PB - Atlantis Press SP - 719 EP - 722 SN - 2352-541X UR - https://doi.org/10.2991/icmsa-15.2015.131 DO - https://doi.org/10.2991/icmsa-15.2015.131 ID - Sawada2014/06 ER -