Fabrication and Characterization of 1200V 40A 4H-SiC SBD
Gang Chen, Yinglu Fang, Yun Li, Lin Wang, Song Bai, Ao Liu, Runhua Huang, Yonghong Tao, Zhifei Zhao
Available Online January 2016.
- https://doi.org/10.2991/ifeea-15.2016.12How to use a DOI?
- 4H-SiC, SBD, ohmic
- High voltage 4H-SiC Ti schottky junction barrier schottky (JBS) diode with breakdown voltage of 1200 V and forward current of 40 A has been fabricated. A low reverse leakage current below 1.02 × 10-4 A or 4.08 × 10-4 A/cm2 at the 25 and the reverse bias voltage of 1200 V has been obtained. The forward on-state current was 40 A at VF = 1.61 V with 25 and at VF = 1.89 V with 100 . The chip is 5 mm × 5 mm and the active-region is 3.8 mm × 3.8 mm. The turn-on voltage is about 0.83 V. The on-state resistance is 4 m •cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. By using Ti/Ni/Au multilayer metal structure, the double side Au process of 4H-SiC JBS diode is formed.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Gang Chen AU - Yinglu Fang AU - Yun Li AU - Lin Wang AU - Song Bai AU - Ao Liu AU - Runhua Huang AU - Yonghong Tao AU - Zhifei Zhao PY - 2016/01 DA - 2016/01 TI - Fabrication and Characterization of 1200V 40A 4H-SiC SBD BT - 2015 2nd International Forum on Electrical Engineering and Automation (IFEEA 2015) PB - Atlantis Press SP - 58 EP - 61 SN - 2352-5401 UR - https://doi.org/10.2991/ifeea-15.2016.12 DO - https://doi.org/10.2991/ifeea-15.2016.12 ID - Chen2016/01 ER -