Proceedings of the International Symposium "Engineering and Earth Sciences: Applied and Fundamental Research" dedicated to the 85th anniversary of H.I. Ibragimov (ISEES 2019)

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Electrostatic Charges and Ion Implantation Impact on the MIS Transistors Parameters Degradation

Authors
G.A. Mustafayev, N.V. Cherkesova, A.I. Khasanov, A.G. Mustafayev
Corresponding Author
G.A. Mustafayev
Available Online August 2019.
DOI
10.2991/isees-19.2019.157How to use a DOI?
Keywords
degradation; transistor; hot carriers; ion implantation; threshold voltage; electrostatic charge.
Abstract

Resistance to electrostatic charges is one of the most important problems limiting the very large scale integrated circuits reliability. Increased currents cause the degradation of the instruments characteristics, similar to the degradation that occurs when hot electrons stream passes through. In order to increase the very large scale integrated circuits reliability, under hot electrons occurrence, exposure to ionizing radiation, electrostatic charges, and ion treatment, it is necessary to study the MIS transistors parameters degradation mechanisms. The results of the study show that the maximum the threshold voltage shift occurs when aluminum is sprayed onto the structure with a floating gate. The reason for the MIS transistors characteristics degradation is the charges of the gate electrode and the current in the oxide arising from strong electric fields. The degree of characteristics degradation in the hot electrons injection case does not depend on the energy of the ions bombarding the substrate surface.

Copyright
© 2019, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the International Symposium "Engineering and Earth Sciences: Applied and Fundamental Research" dedicated to the 85th anniversary of H.I. Ibragimov (ISEES 2019)
Series
Atlantis Highlights in Material Sciences and Technology
Publication Date
August 2019
ISBN
10.2991/isees-19.2019.157
ISSN
2590-3217
DOI
10.2991/isees-19.2019.157How to use a DOI?
Copyright
© 2019, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

risenwbib
TY  - CONF
AU  - G.A. Mustafayev
AU  - N.V. Cherkesova
AU  - A.I. Khasanov
AU  - A.G. Mustafayev
PY  - 2019/08
DA  - 2019/08
TI  - Electrostatic Charges and Ion Implantation Impact on the MIS Transistors Parameters Degradation
BT  - Proceedings of the International Symposium "Engineering and Earth Sciences: Applied and Fundamental Research" dedicated to the 85th anniversary of H.I. Ibragimov (ISEES 2019)
PB  - Atlantis Press
SP  - 38
EP  - 41
SN  - 2590-3217
UR  - https://doi.org/10.2991/isees-19.2019.157
DO  - 10.2991/isees-19.2019.157
ID  - Mustafayev2019/08
ER  -