Electrostatic Charges and Ion Implantation Impact on the MIS Transistors Parameters Degradation
- 10.2991/isees-19.2019.157How to use a DOI?
- degradation; transistor; hot carriers; ion implantation; threshold voltage; electrostatic charge.
Resistance to electrostatic charges is one of the most important problems limiting the very large scale integrated circuits reliability. Increased currents cause the degradation of the instruments characteristics, similar to the degradation that occurs when hot electrons stream passes through. In order to increase the very large scale integrated circuits reliability, under hot electrons occurrence, exposure to ionizing radiation, electrostatic charges, and ion treatment, it is necessary to study the MIS transistors parameters degradation mechanisms. The results of the study show that the maximum the threshold voltage shift occurs when aluminum is sprayed onto the structure with a floating gate. The reason for the MIS transistors characteristics degradation is the charges of the gate electrode and the current in the oxide arising from strong electric fields. The degree of characteristics degradation in the hot electrons injection case does not depend on the energy of the ions bombarding the substrate surface.
- © 2019, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - G.A. Mustafayev AU - N.V. Cherkesova AU - A.I. Khasanov AU - A.G. Mustafayev PY - 2019/08 DA - 2019/08 TI - Electrostatic Charges and Ion Implantation Impact on the MIS Transistors Parameters Degradation BT - Proceedings of the International Symposium "Engineering and Earth Sciences: Applied and Fundamental Research" dedicated to the 85th anniversary of H.I. Ibragimov (ISEES 2019) PB - Atlantis Press SP - 38 EP - 41 SN - 2590-3217 UR - https://doi.org/10.2991/isees-19.2019.157 DO - 10.2991/isees-19.2019.157 ID - Mustafayev2019/08 ER -