Impact of Defects Caused by Hot Charge Carriers on the Digital VLSI Parameters
- https://doi.org/10.2991/isees-19.2019.158How to use a DOI?
- degradation; transistor; hot carriers; reliability; instrument modeling; impact ionization.
The problem of establishing a contact between degradation at the instrument and the circuit levels while designing very large scale integrated circuits (VLSI) is of a great interest. Instrument and circuits sensitivity to the effects conded by hot carriers is different, which is determined by a large number of factors. Hot carriers generated at the boundary cause a charge, which causes a change in the electric field and carrier mobility in the channel, with the result that the device degrades non-uniformly. Instrument degradation parameters were used in the SPICE instrument modeling program to assess degradation caused by hot carriers. For the initial and exposed n-channel MIS transistor, using the SUXES program, the parameters of the model that characterizes the deterioration was determined. The results of the study show that for VLSI, containing mainly inverter and valve circuits, the degradation of the switching period from one logical value to another in the transmitting valves will be a decisive effect in the general characteristic of the circuits' switching period.
- © 2019, the Authors. Published by Atlantis Press.
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- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - G.A. Mustafayev AU - N.V. Cherkesova AU - A.I. Khasanov AU - A.G. Mustafayev PY - 2019/08 DA - 2019/08 TI - Impact of Defects Caused by Hot Charge Carriers on the Digital VLSI Parameters BT - Proceedings of the International Symposium "Engineering and Earth Sciences: Applied and Fundamental Research" dedicated to the 85th anniversary of H.I. Ibragimov (ISEES 2019) PB - Atlantis Press SP - 34 EP - 37 SN - 2590-3217 UR - https://doi.org/10.2991/isees-19.2019.158 DO - https://doi.org/10.2991/isees-19.2019.158 ID - Mustafayev2019/08 ER -