Study of Electrical Behavior of Hf-Ti-O Higher-k Dielectric for ETSOI MOSFET Application

DOI

10.2991/ism3e-15.2015.142How to use a DOI?

Abstract

The electrical properties of Hf-Ti-O higher-k thin film and ETSOI MOSFET with Hf-Ti-O gate dielectric were studied in this work. To accurately extract the permittivity of the Hf-Ti-O thin film, the different physical thicknesses Hf-Ti-O thin films were fabricated by radio frequency magnetron co-sputtering on Si substrate with SiO2 interfacial layer. The permittivity of the Hf-Ti-O thin film is 32.5. The MOS device and ETSOI PMOSFET device using Hf-Ti-O higher-k films as gate dielectric were fabricated by atomic layer deposition (ALD). The MOS device shows low equivalent oxide thickness (EOT) of ~0.76 nm, flat-band voltage (Vfb) of 90 mV, and gate leakage current density (0.31 A/cm2@Vfb-1 V). And the ETSOI MOSFET with 40 nm gate-length reveals good electric properties with a switch ratio of 2.8×104, a high transconductance (Gm) of 2.5 mS, appropriate saturation threshold voltage of -0.158 V and liner threshold voltage of -0.199 V. The drain-induced-barrier lowering (DIBL) of 48 mV/V and a subthreshold swing (SS) of 69 mV/dec indicate that ETSOI PMOSFET has good short-channel control capacity.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Xiaoqiang Chen
AU  - Yuhua Xiong
AU  - Feng Wei
AU  - Hongbin Zhao
AU  - Jun Du
AU  - Zhaoyun Tang
AU  - Bo Tang
AU  - Jiang Yan
PY  - 2015/11
DA  - 2015/11
TI  - Study of Electrical Behavior of Hf-Ti-O Higher-k Dielectric for ETSOI MOSFET Application
BT  - Proceedings of the 2015 International Symposium on Material, Energy and Environment Engineering
PB  - Atlantis Press
SP  - 587
EP  - 590
SN  - 2352-5401
UR  - https://doi.org/10.2991/ism3e-15.2015.142
DO  - 10.2991/ism3e-15.2015.142
ID  - Chen2015/11
ER  -