Study of Inductively Coupled Plasma Etching of ZnS Materials

DOI

10.2991/jiaet-18.2018.66How to use a DOI?

Keywords

Inductively coupled plasma; Zinc sulfide; Etching rate; Surface roughness

Abstract

In order to get the optimized process parameters for etching ZnS by inductively coupled plasma (ICP), a mixed gas of CH4, H2 and Ar is used for the etching. This paper studies the influence of ICP etching rate and surface roughness after etching of ZnS by changing the process parameters of CH4/H2/Ar gas mixing ratio, the total flow, bias power and RF power. The experimental result show that when CH4:H2:Ar=1:7:5, the gas flow is 39 sccm, bias power is 80W, and RF power is 300W, the etching rate of ZnS is 18.5 nm/min and the minimum surface roughness Ra is 6.3 nm; the change of Ar content has a great influence on the etching rate and surface roughness.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Jing Xing
AU  - Yan Xu
PY  - 2018/03
DA  - 2018/03
TI  - Study of Inductively Coupled Plasma Etching of ZnS Materials
BT  - Proceedings of the 2018 Joint International Advanced Engineering and Technology Research Conference (JIAET 2018)
PB  - Atlantis Press
SP  - 370
EP  - 375
SN  - 2352-5401
UR  - https://doi.org/10.2991/jiaet-18.2018.66
DO  - 10.2991/jiaet-18.2018.66
ID  - Xing2018/03
ER  -