The Influence of the Distance between the Strike Location and the Drain on 90nm Dual-Well Bulk CMOS

DOI

10.2991/mmsa-18.2018.33How to use a DOI?

Keywords

strike location; bipolar amplification effect; critical charge; threshold LET

Abstract

Based on the 3D TACD simulation, by building and simulating 90nm dual-well CMOS device under heavy ion radiation with different distance between strike position and the drain, researching the influence to NMOS, PMOS, SRAM threshold LET and the critical charge. For NMOS, with the increase of the distance, bipolar amplification effect will reduce influence even make no difference. The situation in PMOS is as same as the condition of a directly strike on drain, and the bipolar amplification effect increases the charge collection efficiency. Meanwhile, as the distance increases, the threshold LET and the critical charge of SRAM while increase.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Download article (PDF)

TY  - CONF
AU  - Qiqi Wen
AU  - Wanting Zhou
PY  - 2018/03
DA  - 2018/03
TI  - The Influence of the Distance between the Strike Location and the Drain on 90nm Dual-Well Bulk CMOS
BT  - Proceedings of the 2018 International Conference on Mathematics, Modelling, Simulation and Algorithms (MMSA 2018)
PB  - Atlantis Press
SP  - 151
EP  - 155
SN  - 1951-6851
UR  - https://doi.org/10.2991/mmsa-18.2018.33
DO  - 10.2991/mmsa-18.2018.33
ID  - Wen2018/03
ER  -